PHOTODETECTORS BASED ON FIELD EFFECT IN POROUS SILICON – REDUCED GRAPHENE OXIDE STRUCTURES

Igor Olenych, Andrii Kozak

Abstract


Background. Graphene field-effect transistors (FETs) have high potential for application in sensor electronics as detectors of electromagnetic radiation in a wide spectral range due to the high sensitivity of graphene ambipolar conductivity to local changes in the electric field. The use of a reduced graphene oxide (RGO) film provides cost reduction of photodetectors based on graphene FETs. On the other hand, an additional porous silicon light-absorbing layer can increase their sensitivity due to an increase in surface area.

Materials and methods. Graphene field-effect photodetectors were created by drying a film-forming RGO suspension deposited on the surface of the porous silicon on a silicon substrate, which served as the gate of the FET. Electrical source and drain contacts were formed on the surface of the obtained RGO film. To improve the insulating properties of porous silicon, it was electrochemically oxidized, and an additional layer of Al2O3 was deposited. The electrical and photoelectric properties of the created field-effect photodetectors were investigated in DC and AC modes using a white LED and standard optical equipment.

Results. An increase in the conductivity and capacitance of the RGO channel of the FETs was detected under the influence of white light irradiation. Based on the analysis of the drain current dependencies on the gate voltage, it has been established that the efficiency and photosensitivity of the FETs based on the porous silicon and RGO film are increased by the deposition of an additional Al2O3 layer on the surface of electrochemically oxidized porous silicon. The maximum sensitivity of the created photodetectors is in the spectral range of 800–900 nm. The response time to white light pulses is about 0.5 ms. Passivation of the porous silicon surface with the oxide film and the Al2O3 layer causes an increase in the photosignal relaxation time.

Conclusions. The features of using FETs based on porous silicon structures and RGO film as visible radiation detectors have been investigated. The electrical, spectral, and time characteristics of the created field-effect photodetectors were determined.

Keywords: Graphene field-effect transistor, reduced graphene oxide, porous silicon, photosensitivity.


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DOI: http://dx.doi.org/10.30970/eli.33.14

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