Electronics and information technologies / Електроніка та інформаційні технології

CRYSTAL OPTICAL PARAMETERS OF UNIAXIALLY COMPRESSED LiNaSO₄CRYSTALS

TEMPLATE DIRECTED FORMATION OF METALLIC In / (0001) SURFACE OF Sb₂Te₃ 2D LAYERED SEMICONDUCTOR SELF-ASSEMBLING NANOSYSTEM

FIRST-PRINCIPLE MODELING OF STRUCTURAL, ELECTRONIC, AND OPTICAL PROPERTIES OF CH₃NH₃PbBr₃

FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF p-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

INFLUENCE OF LOW-TEMPERATURE ANNEALING IN VACUUM ON PHYSICAL PROPERTIES OF SINGLE CRYSTAL n-Cd_xHg_1-xTe (x ≈ 0,19)

RADIATIVE AND MAGNETICALLY STIMULATED CHANGE OF THE ELECTRICAL PROPERTIES OF THE SіO₂-Sі STRUCTURE WITH A HIGH CONTENT OF DISLOCATION COMPLEXES

INFLUENCE OF LOW-TEMPERATURE ANNEALING IN VACUUM ON PHYSICAL PROPERTIES OF SINGLE CRYSTAL p-Cd_xHg_1-xTe (x≈0,28)

HARDWARE AND SOFTWARE COMPLEX OF INTELLECTUALIZED ORNITHOPTER-TYPE UAV FOR MILITARY APPLICATIONS

REGRESSION MODELS FOR SMART HOME DATA ANALYSIS

DETECTING ANOMALIES IN ENVIRONMENTAL DATA WITH JETSON NANO

COMBINED OPTICAL METHOD FOR MONITORING OF THE PHYSICAL PARAMETERS OF THIN DIELECTRIC FILMS ON THE SURFACE OF SINGLE-CRYSTAL SILICON

THE EFFECT OF UNIAXIAL PRESSURE ON THE OPTICAL PROPERTIES OF SINGLE-CRYSTAL Tl₂S IN THE REGION OF FUNDAMENTAL ABSORPTION EDGE. II. THEORETICAL ANALYSIS

FEATURES OF APPLICATION OF THE IN SITU AND EX SITU MEASUREMENT TECHNIQUES FOR DETERMINATION OF ¹³⁷Cs SOIL CONTAMINATION

INVESTIGATION OF TRAPS IN β-Ga₂O₃:0.05%Cr AND β-Ga_1,9In_0,1O₃:0,05%Cr CRYSTALS BY FRACTIONAL THERMAL-GLOW TECHNIQUE

ANALYSIS OF SPECTRAL AND KINETIC CHARACTERISTICS OF CATHODOLUMINESCENCE OF Y₂O₃:Eu THIN FILMS AS A RED COMPONENT OF FULL-COLOR HIGH-RESOLUTION FLUORESCENT DISPLAYS

DIFFERENTIAL JONES MATRIX FOR CHOLESTERIC

ELECTROLUMINESCENCE FROM OLED BASED ON DCM DERIVATIVE WITH CHEMICAL FORMULA C₂₅H₂₁N₃O₃

INFLUENCE OF THE OBTAINING CONDITIONS ON THE ELECTROCONDUCTIVITY OF Ga₂O₃ THIN FILMS