INVESTIGATION OF THE MAGNETORESISTIVE EFFECT IN SINGLE- CRYSTALLINE n-CdxHg1-xTe (x = 0,19÷0,2). I. EXPERIMENT

Viktor Belyukh, B. Pavlyk

Abstract


The first part of our article presents the results of experimental studies of the temperature dependences of the magnetoresistance, Δρ|/ρ0 = f(T), of single-crystalline n- CdxHg1‑xTe (x=0,19÷0,2). We studied samples of n-CdxHg1-xTe single crystals grown by the modified Bridgman method from the main components of the 6N or 7N purity class. The crystals were additionally doped with indium from the melt, and therefore they had n-type electrical conductivity. The concentration of the majority charge carriers in such a material usually did not exceed 3×1014см‑3, and the concentration of the dopant was < 5.1015см‑3. Since we performed the magnetoresistance measurements simultaneously with the Hall effect measurements, the samples were prepared in the classical Hall configuration. Approximate sample sizes: (8–10)*(1–2)*(0,6–0,8) мм3. All measurements were carried out in a constant magnetic field with induction B = 0.42 T. For the first time in this material, the dependence of the magnetoresistance on the direction of the magnetic field was experimentally observed. It was found that the resistivity ρ| of n-CdxHg1-xTe samples-parallelepiped, measured on the left face (when viewed in the direction of vector B), is lower at the positive direction of the magnetic field (B+) than at the negative (B-). These results are confirmed by multiple measurements on several samples. In addition, in the n–CdxHg1-xTe (x~0,19) sample, measurements on the left face revealed a decrease in the resistivity in the magnetic field (B+) compared with measurements without the field (anomalous magnetoresistive effect). This effect is observed in a fairly wide temperature range. In the n–CdxHg1-xTe (x~0,2) sample, this effect was also revealed, but only in a small temperature range. In the second part of this article a detailed theoretical analysis of the obtained results will be made.

Key words: narrow gap semiconductors, conductivity, magnetoresistance, magnetoresistive effect


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DOI: http://dx.doi.org/10.30970/eli.15.10

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