INVESTIGATION OF POROUS SILICON PHOTOCONDUCTIVE STRUCTURES

Petro Parandiy, Liubomyr Monastyrskii

Abstract


Porous silicon layers photoconductive and electrical properties obtained by electrochemical etching of silicon have been investigated. Photoconductive and current-voltage properties depend on structure morphology are determined by not only properties of modified layer, but presence of charge carriers’ traps. The photosensitivity of structures with PS layers is determined by thickness of porous layer.

Key words: porous silicon; sensor; photoconductivity; current-voltage characteristic; photosensitivity


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DOI: http://dx.doi.org/10.30970/eli.10.12

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