FIELD-EFFECT TRANSISTOR BASED ON REDUCED GRAPHENE OXIDE

Igor Olenych

Abstract


Graphene field-effect transistors are recognized as a potential alternative to metal-oxide-semiconductor transistors and can become a new element base in the post-silicon epoch. Increasing the efficiency of graphene electronic devices and simplifying their manufacturing technology are important R&D areas. New technical solutions related to the development of graphene field-effect transistors are proposed in the paper. A reduced graphene oxide (RGO) film was used as the conducting channel of the field-effect transistor. A film-forming suspension of RGO obtained by the chemical reduction of graphene oxide with hydrazine monohydrate was deposited on the silicon substrate with a SiO2 layer and air-dried at room temperature. A comparative analysis of ultraviolet and visible absorbance spectra of the graphene oxide and RGO films on a glass substrate indicates the high degree of graphene nanosheet reduction.

The electrical properties of the field-effect transistor based on RGO were studied in DC and AC modes. The nonlinear character of the ID-VD curves of the obtained field-effect transistor was revealed. A significant influence of electrically active defects in the SiO2 layer on the bipolar electrical conductivity of the RGO film was established based on the analysis of current-voltage characteristics and the dependence of the resistance of the field-effect transistor conductive channel on the gate voltage. An analysis of the switching characteristics revealed sections of linear dependence of the drain current ID on the gate voltage VG with an Ion/Ioff ratio of more than two orders of magnitude. The high sensitivity of the RGO film conductivity near the point of charge neutrality to the local electric field can be used to create photo- and gas-sensitive sensor devices based on the RGO field-effect transistor.

Key words: graphene field-effect transistor, reduced graphene oxide, current-voltage characteristic, switching characteristic.


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DOI: http://dx.doi.org/10.30970/eli.21.8

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