Electronics and information technologies / Електроніка та інформаційні технології

Belyukh, Viktor

• No 12 (2019): Issue 12 - MATERIALS FOR ELECTRONIC ENGINEERING
  A POSSIBLE PHYSICAL MECHANISM FOR THE FORMATION OF THE EXPONENTIAL FUNDAMENTAL ABSORPTION EDGE IN INDIRECT GaP SEMICONDUCTORS
  Abstract  PDF (Українська)
• No 11 (2019): Issue 11 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  COMBINED OPTICAL METHOD FOR MONITORING OF THE PHYSICAL PARAMETERS OF THIN DIELECTRIC FILMS ON THE SURFACE OF SINGLE-CRYSTAL SILICON

  
  Abstract  PDF (Українська)
• No 10 (2018): Issue 10 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  INFLUENCE OF LOW-TEMPERATURE ANNEALING IN VACUUM ON PHYSICAL PROPERTIES OF SINGLE CRYSTAL p-Cd_xHg_1-xTe (x≈0,28)

  
  Abstract  PDF (Українська)
• No 09 (2018): Issue 09 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  INFLUENCE OF LOW-TEMPERATURE ANNEALING IN VACUUM ON PHYSICAL PROPERTIES OF SINGLE CRYSTAL n-Cd_xHg_1-xTe (x ≈ 0,19)

  
  Abstract  PDF (Українська)
• No 13 (2020): Issue 13 - MATERIALS FOR ELECTRONIC ENGINEERING
  THE EFFECT OF UNIAXIAL PRESSURE ON THE OPTICAL PROPERTIES OF SINGLE-CRYSTAL Tl₂S IN THE REGION OF FUNDAMENTAL ABSORPTION EDGE. I. EXPERIMENT
  Abstract  PDF (Українська)
• No 13 (2020): Issue 13 - MATERIALS FOR ELECTRONIC ENGINEERING
  APPLICATION OF THE COMBINED OPTICAL METHOD FOR THE STUDY OF SILICON NITRIDE THIN FILMS ON THE SURFACE OF MONOCRYSTALLINE SILICON
  Abstract  PDF (Українська)
• No 14 (2020): Issue 14 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  THE EFFECT OF UNIAXIAL PRESSURE ON THE OPTICAL PROPERTIES OF SINGLE-CRYSTAL Tl₂S IN THE REGION OF FUNDAMENTAL ABSORPTION EDGE. II. THEORETICAL ANALYSIS

  
  Abstract  PDF (Українська)
• No 15 (2021): Issue 15 - MATERIALS FOR ELECTRONIC ENGINEERING
  INVESTIGATION OF THE MAGNETORESISTIVE EFFECT IN SINGLE- CRYSTALLINE n-Cd_xHg_1-xTe (x = 0,19÷0,2). I. EXPERIMENT
  Abstract  PDF (Українська)
• No 15 (2021): Issue 15 - MATERIALS FOR ELECTRONIC ENGINEERING
  THE COMBINED ELLIPSOMETRIC METHOD OF COMPLETE OPTICAL CHARACTERIZATION OF CRYSTALS. I. DETERMINATION OF THE ORIENTATION OF THE OPTICAL INDICATRIX
  Abstract  PDF
• No 16 (2021): Issue 16 - MATERIALS FOR ELECTRONIC ENGINEERING
  THE COMBINED ELLIPSOMETRIC METHOD OF COMPLETE OPTICAL CHARACTERIZATION OF CRYSTALS. II. DETERMINATION OF THE OPTICAL CONSTANTS OF CRYSTAL
  Abstract  PDF
• No 18 (2022): Issue 18 - Articles
  

  THE COMBINED ELLIPSOMETRIC METHOD OF COMPLETE OPTICAL CHARACTERIZATION OF CRYSTALS. III. EXPERIMENTAL DETERMINATION OF THE ORIENTATION OF OPTICAL AXIS IN CRYSTAL

  
  Abstract  PDF
• No 20 (2022): Issue 20 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  THE COMBINED ELLIPSOMETRIC METHOD OF COMPLETE OPTICAL CHARACTERIZATION OF CRYSTALS.
  IV. APPLICATION TO UNIAXIAL CRYSTAL.

  
  Abstract  PDF