Electronics and information technologies / Електроніка та інформаційні технології

Danylyuk, H.

• No 12 (2019): Issue 12 - MATERIALS FOR ELECTRONIC ENGINEERING
  A POSSIBLE PHYSICAL MECHANISM FOR THE FORMATION OF THE EXPONENTIAL FUNDAMENTAL ABSORPTION EDGE IN INDIRECT GaP SEMICONDUCTORS
  Abstract  PDF (Українська)
• No 13 (2020): Issue 13 - MATERIALS FOR ELECTRONIC ENGINEERING
  THE EFFECT OF UNIAXIAL PRESSURE ON THE OPTICAL PROPERTIES OF SINGLE-CRYSTAL Tl₂S IN THE REGION OF FUNDAMENTAL ABSORPTION EDGE. I. EXPERIMENT
  Abstract  PDF (Українська)
• No 14 (2020): Issue 14 - MATERIALS FOR ELECTRONIC ENGINEERING
  

  THE EFFECT OF UNIAXIAL PRESSURE ON THE OPTICAL PROPERTIES OF SINGLE-CRYSTAL Tl₂S IN THE REGION OF FUNDAMENTAL ABSORPTION EDGE. II. THEORETICAL ANALYSIS

  
  Abstract  PDF (Українська)