Thermodynamics of intrinsic
point defects in cadmium telluride at the boundary of the homogeneity region
Chem.
Met. Alloys 4 (2011) 223-228
https://doi.org/10.30970/cma4.0188
Dmytro FREIK, Igor GORITCHOK, Volodymyr PROKOPIV
Based on a crystal chemical model for defect
subsystems, the equilibrium concentrations of point defects and free charge
carriers and the degree of off-stoichiometry of CdTe have been calculated as a function of the annealing
temperature (T) and vapor pressure of
the additional component (cadmium PCd or tellurium PÒå). The requirements
for double-temperature annealing leading to the formation of materials with n-
or p-type conductivity have been determined.
Ò-Õ
diagram of CdTe.
Keywords
Cadmium telluride / Two-temperature annealing /
Electrical properties / Point defects