Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region

Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region

Chem. Met. Alloys 4 (2011) 223-228

https://doi.org/10.30970/cma4.0188

Dmytro FREIK, Igor GORITCHOK, Volodymyr PROKOPIV

Based on a crystal chemical model for defect subsystems, the equilibrium concentrations of point defects and free charge carriers and the degree of off-stoichiometry of CdTe have been calculated as a function of the annealing temperature (T) and vapor pressure of the additional component (cadmium P_Cd or tellurium P_Те). The requirements for double-temperature annealing leading to the formation of materials with n- or p-type conductivity have been determined.

Т-Х diagram of CdTe.

Keywords

Cadmium telluride / Two-temperature annealing / Electrical properties / Point defects