Hf3Ga1.97(2)Sn1.03(2),
a ternary derivative of the ThIn type
Chem.
Met. Alloys 4
(2011) 166-174
https://doi.org/10.30970/cma4.0191
Iryna VOZNYAK, Yaroslav
TOKAYCHUK, Viktor HLUKHYY,
Thomas F. FÄSSLER, Roman GLADYSHEVSKII
The crystal structure
of the substitutional solid solution HfGa1-xSnx (x =
0-0.34(1)) was refined from X-ray single-crystal and powder diffraction data
(space group Pbcm,
Pearson symbol oP24, a = 9.3370(19), b = 8.6920(17), c = 5.6650(11) Å for Hf3Ga1.97(2)Sn1.03(2)).
The structure of the ideal limiting formula Hf3Ga2Sn,
ignoring partial Ga/Sn disorder, represents the first
ternary ordering derivative of the structure type ThIn.
The structure of Hf3Ga2Sn
is closely related to that of Hf5GaSn3 (limiting composition
of the interstitial solid solution Hf5GaxSn3 (x = 0-1), structure type Hf5CuSn3,
space group P63/mcm) and can be derived from it applying
group-subgroup relations between the space groups.
Monoatomic layers in the structure of Hf5CuSn3.
Keywords
Hafnium / Gallium / Tin /
Single-crystal X-ray diffraction / Crystal structure / Substitutional
solid solution