Point defects and oxidation
state of additives in rare-earth metal doped crystals of lead telluride PbTe:Ln
Chem.
Met. Alloys 4 (2011) 160-165
https://doi.org/10.30970/cma4.0182
Dmytro FREIK, Liliya TUROVSKA, Volodymyra BOYCHUK
Models describing the point defects in
rare-earth metal Ln (Sm,
Gd, La,
Pr)
doped lead telluride crystals have been developed. The parameters of the charge
disproportionation of the additives and their impact
on the conductivity type in р-PbTe:Ln crystals were determined. Based on the
proposed crystal-quasi-chemical formulae, the dependencies of the
concentration of point defects and free carriers and the Hall concentration of
current carriers on the doping agent content were calculated.
Залежність холлівської
концентрації носіїв струму (1 – nH)
та концентрації точкових дефектів у кристалах n-PbTe:Sm (а)
(α = 0.006 ат. %) та р-PbTe:Sm
(б) (β = 0.013 ат. %) від вмісту легуючої домішки.
Ni: 2 – 
, 3 – 
, 4 – 
, 5 – 
, 6 – 
, 7 – 
, 8 – 
, 9 – n,
10 – p.
Keywords
Lead telluride / Rare-earth metals / Point defects / Crystal-quasi-chemical formulae