The Tb-Hf-Si system at 873 K
Chem.
Met. Alloys 2
(2009) 187-193
https://doi.org/10.30970/cma2.0115
Nataliya MUTS, Mykola MANYAKO, Wieslaw
ŁASOCHA, Roman GLADYSHEVSKII
The isothermal cross-section of the phase
diagram of the ternary Tb-Hf-Si system at 873 K was constructed. The formation
of two compounds was established: Tb2Hf3Si4
(Sc2Re3Si4 type, P41212, tP36,
Z = 4; a = 0.72057(8), c =
1.3199(2) nm) and (Tb0.7Hf0.3)Si (CrB type, Cmcm, oS8, Z = 4; a = 0.42241(8), b = 1.0483(2), c = 0.38227(7) nm).
Isothermal cross-section of the phase diagram
of the ternary Tb-Hf-Si system at 873 K: 1 – Tb2Hf3Si4,
2 – (Tb0.7Hf0.3)Si.
Keywords
Terbium / Hafnium / Silicon / Phase diagram /
Crystal structure