The Tb-Hf-Si system at 873 K

Chem. Met. Alloys 2 (2009) 187-193

https://doi.org/10.30970/cma2.0115

Nataliya MUTS, Mykola MANYAKO, Wieslaw ŁASOCHA, Roman GLADYSHEVSKII

The isothermal cross-section of the phase diagram of the ternary Tb-Hf-Si system at 873 K was constructed. The formation of two compounds was established: Tb₂Hf₃Si₄ (Sc₂Re₃Si₄ type, P4₁2₁2, tP36, Z = 4; a = 0.72057(8), c = 1.3199(2) nm) and (Tb_0.7Hf_0.3)Si (CrB type, Cmcm, oS8, Z = 4; a = 0.42241(8), b = 1.0483(2), c = 0.38227(7) nm).

Isothermal cross-section of the phase diagram of the ternary Tb-Hf-Si system at 873 K: 1 – Tb₂Hf₃Si₄, 2 – (Tb_0.7Hf_0.3)Si.

Keywords

Terbium / Hafnium / Silicon / Phase diagram / Crystal structure