Crystal chemistry of defects in copper- and
oxygen-doped zinc chalcogenide crystals
Chem.
Met. Alloys 2
(2009) 170-176
https://doi.org/10.30970/cma2.0101
Dmytro FREIK, Nazar STASHKO, Nataliya FREIK, Lyubov MEZHYLOVSKA, Galyna GURGULA
Generalized quasi-chemical
formula for ZnX crystals (X = S, Se) with O and Cu admixtures,
taking into account both intrinsic point defects and complexes formed with the
doping elements, are proposed. The dependence of the concentration of defects
and the Hall concentration of the current carriers on the content of the Cu
doping agent was calculated for different values of residual oxygen
concentration both for stoichiometric zinc chalcogenides and for n- and p-ZnX. The role of copper and oxygen in the
formation of the electronic subsystem of the ZnX crystals and in the realization of thermodynamic p-n transitions
was investigated. It is shown that if [O] > [Cu], for crystals with n-type
conductivity 
, 
, and 
point defects and
their complexes 
, 
prevail, whereas for
p-type crystals, , 
, and 
dominate. If [Cu] >
[O], for n-ZnX , , point defects and complex prevail, while
for p-type crystals 
, 
and are found.
Просторові залежності холлівської концентрації nH для кристалів n-ZnX:O:Cu (a) та p-ZnX:O:Cu (б) від відхилення від стехіометрії α (β) та вмісту легуючої домішки [Cu].
Keywords
Crystals / Zinc
chalcogenides / Oxygen complexes / Quasi-chemical formulae / Point defects