Electrical transport
properties and electronic structure of RNiSn compounds (R=Y,
Gd, Tb, Dy, and Lu)
Chem.
Met. Alloys 1
(2008) 298-302
https://doi.org/10.30970/cma1.0069
V.V. ROMAKA, E.K. HLIL, L. ROMAKA, D. FRUCHART,
A. HORYN
A series of RNiSn
compounds, where R = Y, Gd, Tb, Dy,
and Lu, with the TiNiSi structure type (space group Pnma) was
synthesized and the electrical transport properties were investigated by means
of electrical resistivity and Seebeck coefficient
measurements in the temperature range 80-380 K. All of the investigated
compounds exhibit metallic-like conductivity. Electronic structure calculations
based on the Full Potential Linearized Augmented
Plane Wave (FLAPW) method were carried out to obtain
the density of states (DOS) for the investigated compounds, from which the
electrical properties were explained.
DOS of the majority spin and the minority spin
in LuNiSn from FLAPW
calculations.
Keywords
Intermetallics / Crystal structure / Electrical
properties / Electronic structure calculations