Crystal structures of the
ternary compounds Yb(Ga,Si)2-x
Chem.
Met. Alloys 10 (2017)
30-39
https://doi.org/10.30970/cma10.0358
Taras DELENKO, Marina BOYKO, Natalia MUTS, Yaroslav TOKAYCHUK, Roman GLADYSHEVSKII
The existence of two ternary compounds with AlB2-
and α-ThSi2-type structures was confirmed in the system Yb–Ga–Si
at 600 and 500°C and their crystal structures were refined by the Rietveld method for different compositions. In addition, a
new ternary phase was found at 500°C: YbGa0.60(7)Si1.27(7)
(structure type GdSi1.4, Pearson symbol oI12, space group Imma, a = 4.0646(5),
b = 4.0634(4), c = 14.0796(9) Å). The
structure types AlB2, α-ThSi2,
and GdSi1.4 are members of the family of structures with trigonal-prismatic coordination of the smaller atoms.
Substitution of Si atoms for Ga
atoms in the ternary phases leads to increased dimensionality of the network
formed by the p‑element atoms.
Networks formed by the p-element atoms in the structures of the ternary compounds in the
system Yb–Ga–Si.
Keywords
Ytterbium / Gallium / Silicon / X-ray powder diffraction
/ Crystal structure