Charge carrier
transfer in
amorphous (GeS)1-õBiõ films
Chem.
Met. Alloys 6
(2013) 200-204
https://doi.org/10.30970/cma6.0272
The influence of Bi
additions on the electrical
and photoelectrical properties of amorphous (GeS)1-õBiõ films (0 ≤ õ ≤ 0.15) has been
investigated. Adding Bi to amorphous GeS condensates
leads to changes in the mechanism of conductivity and inversion of the
conductivity type. Bi-additives reduce the activation energy of
photoconductivity and photosensitivity of the GeS
films. The changes of the physical properties of the films are explained
considering a heterogeneous structure of the condensates and defect states in
the mobility gap.
Intensity dependence of the
photoconductivity of (GeS)1-xBix amorphous films at 300 K and 345 K
Keywords
Amorphous films / Chalcogenide semiconductors / Defect states / GeS-Bi