The ternary system Hf–Ga–Si at 600ºC

Chem. Met. Alloys 5 (2012) 84-89

https://doi.org/10.30970/cma5.0221

Iryna TOKAYCHUK, Yaroslav TOKAYCHUK, Roman GLADYSHEVSKII

The isothermal section of the phase diagram of the ternary system Hf–Ga–Si was constructed in the whole concentration range at 600ºC, using X-ray powder and single-crystal diffraction. Continuous solid solutions Hf₅Ga_3‑xSi_x (x = 0-3) and Hf₂Ga_1‑xSi_x (x = 0-1) are formed between the isostructural binary compounds Hf₅Ga₃ and Hf₅Si₃ (structure type Mn₅Si₃) and Hf₂Ga and Hf₂Si (structure type CuAl₂). The other binary compounds of the systems Hf–Ga and Hf–Si do not dissolve noticeable amounts of the third component. One ternary compound, HfGa_0.33Si_0.67, is formed in the system (structure type TlI, Pearson symbol oS8, space group Cmcm, a = 3.7338(7), b = 9.889(2), c = 3.7441(7) Å). No tendency towards ordering of the Ga and Si atoms was observed in the structures of the ternary phases.

Isothermal section of the phase diagram of the system Hf–Ga–Si at 600ºC

Keywords

Hafnium / Gallium / Silicon / Phase diagram / X-ray diffraction / Crystal structure / Solid solution