The ternary system Hf–Ga–Si
at 600ºC
Chem.
Met. Alloys 5 (2012) 84-89
https://doi.org/10.30970/cma5.0221
Iryna TOKAYCHUK, Yaroslav
TOKAYCHUK, Roman GLADYSHEVSKII
The isothermal
section of the phase diagram of the ternary system Hf–Ga–Si was constructed in the
whole concentration range at 600ºC, using X-ray powder and single-crystal
diffraction. Continuous
solid solutions Hf5Ga3‑xSix (x = 0-3)
and Hf2Ga1‑xSix (x = 0-1) are formed between
the isostructural binary compounds Hf5Ga3
and Hf5Si3 (structure type Mn5Si3)
and Hf2Ga
and Hf2Si (structure type CuAl2). The other binary
compounds of the systems Hf–Ga and Hf–Si do not
dissolve noticeable amounts of the third component. One ternary compound, HfGa0.33Si0.67, is
formed in the system (structure type TlI, Pearson
symbol oS8, space group Cmcm,
a = 3.7338(7), b = 9.889(2), c = 3.7441(7) Å). No tendency towards ordering of the Ga and Si atoms was observed in
the structures of the ternary phases.
Isothermal section of the phase diagram of the
system Hf–Ga–Si at 600ºC
Keywords
Hafnium / Gallium
/ Silicon / Phase diagram / X-ray diffraction / Crystal structure / Solid solution