Thermodynamics of intrinsic
point defects in non-stoichiometric lead telluride
Chem.
Met. Alloys 5 (2012) 1-7
https://doi.org/10.30970/cma5.0193
Dmytro FREIK, Igor GORITCHOK, Yuriy
LYSYUK, Myroslava SHEVCHUK
Based on a crystal chemical model for defect
subsystems, the equilibrium concentrations of point defects and free charge
carriers in PdTe crystals submitted to
two-temperature annealing have been calculated as a function of temperature T and tellurium vapor pressure PТе.
The technological conditions leading to the formation of materials with n- or
p-type conductivity have been determined.
Залежність концентрації
електронів n, дірок p, холлівської
концентрації Nx
і точкових дефектів [D]
Keywords
Lead telluride / Two-temperature annealing / Electrical properties / Point defects